Characterization of influenza virus neuraminidase with hemagglutinin activity and its comparison with that of viral neuraminidaseJIT S. ARORA, D; GABRIEL, L. F.Biochimica et biophysica acta. 1986, Vol 884, Num 1, pp 73-83, issn 0006-3002Article

A Doping-Dependent Subthreshold Current Model for Short-Channel Symmetric Double-Gate (DG) MOSFETsPRAMOD KUMAR TIWARI; JIT, S.Journal of nanoelectronics and optoelectronics. 2010, Vol 5, Num 1, pp 82-88, issn 1555-130X, 7 p.Article

A Threshold Voltage Model for the Short-Channel Double-Gate (DG) MOSFETs with a Vertical Gaussian Doping ProfileTIWARI, Pramod Kumar; JIT, S.Journal of nanoelectronics and optoelectronics. 2011, Vol 6, Num 2, pp 207-213, issn 1555-130X, 7 p.Article

Analytical study of the photo-effects on common-source and common-drain microwave oscillators using high pinch-off n-GaAs MESFETSJIT, S; NARASIMHA MURTY, Neti V. L.Microelectronics journal. 2006, Vol 37, Num 5, pp 452-458, issn 0959-8324, 7 p.Article

Ultraviolet Detection Characteristics of Pd/n-ZnO Thin Film Schottky Photodiodes Grown on n-Si SubstratesSOMVANSHI, Divya; PANDEY, Amritanshu; JIT, S et al.Journal of nanoelectronics and optoelectronics. 2013, Vol 8, Num 4, pp 349-354, issn 1555-130X, 6 p.Article

Analytical modeling of a DCFL inverter using normally-off GaAs MESFET's under dark and illuminated conditionsJIT, S; BANDHAWAKAR, Garima; PAL, B. B et al.Solid-state electronics. 2005, Vol 49, Num 4, pp 628-633, issn 0038-1101, 6 p.Article

Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si-SOI-MESFETsJIT, S; PRASHANT KUMAR PANDEY; PRAMOD KUMAR TIWARI et al.Solid-state electronics. 2009, Vol 53, Num 1, pp 57-62, issn 0038-1101, 6 p.Article

Proposal of biostimulation for hexachlorocyclohexane (HCH)-decontamination and characterization of culturable bacterial community from high-dose point HCH-contaminated soilsDADHWAL, M; SINGH, A; PRAKASH, O et al.Journal of applied microbiology (Print). 2009, Vol 106, Num 2, pp 381-392, issn 1364-5072, 12 p.Article

A Two-Dimensional Model for the Surface Potential and Subthreshold Current of Doped Double-Gate (DG) MOSFETs with a Vertical Gaussian-Like Doping ProfileDUBEY, Sarvesh; PRAMOD KUMAR TIWARI; JIT, S et al.Journal of nanoelectronics and optoelectronics. 2010, Vol 5, Num 3, pp 332-339, issn 1555-130X, 8 p.Article

A new analytical model for photo-dependent capacitances of GaAs MESFET's with emphasis on the substrate related effectsNARASIMHA MURTY, Neti V. L; JIT, S.Solid-state electronics. 2006, Vol 50, Num 11-12, pp 1716-1727, issn 0038-1101, 12 p.Article

Modelling of doping-dependent subthreshold swing of symmetric double-gate MOSFETsTIWARI, P. K; PANDA, C. R; AGARWAL, A et al.IET circuits, devices & systems (Print). 2010, Vol 4, Num 4, pp 337-345, issn 1751-858X, 9 p.Article

A photo-dependent capacitance model of GaAs MESFET'sNARASIMHA MURTY, Neti V. L; JIT, S.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 5, pp 1005-1017, issn 1862-6300, 13 p.Article

Studies on ZnO/Si Heterojunction Diode Grown by Atomic Layer Deposition TechniqueHAZRA, Purnima; SINGH, S. K; JIT, S et al.Journal of nanoelectronics and optoelectronics. 2013, Vol 8, Num 4, pp 378-382, issn 1555-130X, 5 p.Article

Modified boundary condition at Si-SiO₂ interface for modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET'sJIT, S; PANDEY, Prashant; KUMAR, Abhishek et al.Solid-state electronics. 2005, Vol 49, Num 1, pp 141-143, issn 0038-1101, 3 p.Article